IRF9Z34N P Channel Power Mosfet 19A/55V

The IRF9Z34N is a versatile and powerful MOSFET that can use in a wide range of applications. Power MOSFET IRF9Z34N is a good choice for high-current applications where a high level of performance is require.
The IRF9Z34N is a P-channel power MOSFET (metal-oxide-semiconductor field-effect transistor) that is design for high-current applications. It has a 55V maximum drain-source voltage, a 19A continuous drain current, and a 56W maximum power dissipation. The IRF9Z34N is available in a TO-220 package, which makes it easy to mount on a printed circuit board.

This IRF9Z34N has a 55V maximum drain-source voltage. This means that the voltage difference between the drain and source terminals of the MOSFET should not exceed 55V. If the voltage difference exceeds 55V, the MOSFET can damage.

The IRF9Z34N also has a 19A continuous drain current. This means that the MOSFET can safely conduct a current of 19A continuously. If the current exceeds 19A, the MOSFET could overheat and can damage.

The IRF9Z34N has a 56W maximum power dissipation. This means that the MOSFET can dissipate a maximum of 56W of heat. If the power dissipation exceeds 56W, the MOSFET could overheat and  damage.

The IRF9Z34N is a very fast-switching MOSFET. This means that it can turn on and off very quickly. This is important for applications where high-frequency switching is required.

The IRF9Z34N is also a fully avalanche rated MOSFET. This means that it can withstand a high voltage spike without being damaged. This is important for applications where there is a risk of voltage spikes.

Features : –

The IRF9Z34N is a P-channel power MOSFET, which means that it has a P-type semiconductor material as its substrate. The substrate is connect to the source terminal of the MOSFET. The drain terminal is connect to a metal layer that is deposit on top of the substrate. The gate terminal is connect to a metal layer that is separated from the substrate by an insulating layer.

The IRF9Z34N is a high-performance P-channel power MOSFET that offers a number of benefits, including:

• High current handling capability
• Fast switching speed
• Fully avalanche rated

IRF9Z34N P Channel Power Mosfet Specifications : –

When a voltage is applied to the gate terminal, it creates an electric field that attracts electrons from the substrate to the metal layer. This creates a conductive channel between the source and drain terminals, which allows current to flow. The amount of current that flows is determine by the voltage applied to the gate terminal. here are the specifications of the IRF9Z34N MOSFET:

• Maximum drain-source voltage: 55 V
• Continuous drain current: 19 A
• Maximum power dissipation: 56 W
• Gate threshold voltage: -4 V
• On-resistance: 0.10 Ω
• Switching speed: Fast
• Avalanche rating: Fully avalanche rated
• Package: TO-220
• Operating temperature range: -55 to 175 °C

IRF9Z34N P Channel Power Mosfet Applications : –

Overall, the IRF9Z34N is a versatile and powerful MOSFET that can use in a wide range of applications. It offers a number of benefits, including high current handling capability, fast switching speed, and fully avalanche rating. If you are looking for a high-performance P-channel power MOSFET for your next project, the IRF9Z34N is a great option. Here are some specific examples of the benefits of using the IRF9Z34N in different applications:

• Power supplies: The IRF9Z34N can use in power supplies to switch high currents. This can help to improve the efficiency of the power supply and reduce heat dissipation.
• Motor control: The IRF9Z34N can use to control motors. This can use to start and stop motors, as well as to control the speed of motors.
• Lighting circuits: The IRF9Z34N can use to control lights. This can use to turn lights on and off, as well as to dim lights.
• Audio circuits: The IRF9Z34N can use in audio circuits to amplify signals. This can use to improve the sound quality of audio equipment.
• Automotive circuits: The IRF9Z34N can use in automotive circuits to control various components, such as the headlights, the starter motor, and the fuel pump.

Package : –

1 x IRF9Z34N P Channel Power Mosfet

More Products at majju.pk

• IR2110 Mosfet & IGBT Gate Driver IC
• 37 Sensor Kit All in One Sensor Kit for Arduino
• LCD 1602a Blue Backlight 16-Character 2-Line
• Digispark Rev 3 Attiny85 USB Development Board
• L293D Motor Driver Module/Shield
• 74HC595 Shift Register 7-Segment 8-Bit Serial-in Parallel