IR2110 Mosfet & IGBT Gate Driver IC

The IR2110 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. IR2110 is a monolithic integrated circuit (IC) that is manufactured using proprietary HVIC and latch immune CMOS technologies.

The logic inputs of the IR2110 Driver are compatible with standard CMOS or LSTTL outputs, and the output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The maximum output current for the IR2110 is 2.5A, and the supply current is 340µA.
The IR2110 IC can operate with a gate drive supply voltage of 10 to 20 volts. The minimum voltage required for proper operation is 10 volts, and the maximum voltage is 20 volts. The gate drive voltage is use to turn on and off the MOSFETs that are drive by the IR2110. The higher the gate drive voltage, the faster the MOSFETs will turn on and off.

The IR2110 Mosfet Driver also has a floating channel that can use to drive an N-channel MOSFET or IGBT in the high side configuration. The floating channel requires a separate gate drive voltage, which must be between 10 and 20 volts.

The Mosfet Driver IC IR2110 has two independent output channels, one for the high side and one for the low side. Each output channel has a latch immune CMOS driver that can output a high pulse current of up to 2.5A. The latch immune CMOS drivers are designe to prevent the IR2110 from latching up, which can damage the IC.

The IR2110 Low Side Driver works by using its logic inputs to control the output channels. When the logic inputs are high, the output channels are turn on. When the logic inputs are low, the output channels are turn off.

Features : –

IR2110 High And Low Side Driver is a high voltage MOSFET driver IC. IR2110 Gate Driver can drive both low side and high side switches in half-bridge and low bridge circuits. It has a number of benefits, including:

• High voltage operation
• High speed operation
• Independent high and low side channels
• Logic compatible inputs
• Low power consumption
• Latch immune CMOS technology
• Floating channel

IR2110 Mosfet & IGBT Gate Driver IC Specifications : –

The IR2110 IGBT Circuit Driver can operate up to +500 V, making it suitable for high voltage applications and IR2110 Low Side Driver has a propagation delay of 10 ns, making it suitable for high speed applications. here are the specifications of the IR2110 IGBT Driver Circuit:

• Operating voltage: 10 to 20 volts
• Output current: 2.5 amps
• Propagation delay: 10 nanoseconds
• Rise time: 35 nanoseconds
• Fall time: 25 nanoseconds
• Power consumption: 340 microamps
• Input voltage: 3.3 to 20 volts
• Input current: 10 microamps
• Output logic: CMOS
• Input logic: CMOS Schmitt trigger
• Package: 14-pin PDIP

IR2110 Mosfet & IGBT Gate Driver IC Applications : –

The IR2110 IGBT Circuit Driver‘s independent high and low side channels make it suitable for bidirectional applications. This means that it can use to drive MOSFETs and IGBTs that are use to switch both positive and negative voltages. This can use in applications such as DC-DC converters and motor drives.

The IR2110 IGBT Circuit Driver‘s low power consumption makes it a cost-effective solution for high voltage and high speed gate drive applications. This is because it does not require a lot of power to operate, which can save money on the overall cost of the system. The IR2110 is typically used in applications where high voltage and high speed gate drive is required. Some common applications for the IR2110 include:

• Power converters
• Motor drives
• Inverters
• UPS systems
• LED drivers

IR2110 Mosfet & IGBT Gate Driver IC PIN Descriptions : –

This IR2110 Mosfet & IGBT Gate Driver is a high voltage MOSFET driver IC. IR2110 High And Low Side Driver can drive both low side and high side switches in half-bridge and low bridge circuits.

The IGBT Driver IR2110 has two independent output channels, one for the high side and one for the low side. The high side output is used to drive an N-channel MOSFET or IGBT in the high side configuration, which means that the gate voltage of the MOSFET is higher than the drain voltage. here is the pin description of the IR2110:

• VDD – Power supply voltage, 10 to 20 V.
• VS – Source voltage for the high side MOSFET, -4 to +500 V.
• VSS – Ground.
• HIN – High side input, logic level 0 to 5 V.
• LIN – Low side input, logic level 0 to 5 V.
• HO – High side output, 0 to 2.5 A peak current.
• LO – Low side output, 0 to 2.5 A peak current.
• COM – Common connection for all pins.
• SD – Shutdown input, logic level 0 to 5 V.
• VB – Bootstrap voltage, 10 to 20 V.

Package : –

1 x IR2110 Mosfet & IGBT Gate Driver IC

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