Transistor 2N2222 NPN Switching Transistor 40V 800mA

2N2222 NPN transistor has been commonly used for switching and very high frequency(VHF) amplifier applications. It is made of silicon material and specially designed for low voltage, low to medium current and low power amplifier applications.

2N2222 NPN transistor, a single P-doped layer is embedded among two N-doped layers. This transistor includes three terminals like Base, Emitter & Collector.

The maximum amount of current that could flow through the Collector pin is 800mA, hence we cannot connect loads that consume more than 800mA using this transistor. To bias a transistor we have to supply current to base pin, this current (IB) should be limited to 5mA.

2N2222 NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin. 2N2222A has a gain value of 110 to 800, this value determines the amplification capacity of the transistor

When this transistor is fully biased then it can allow a maximum of 800mA to flow across the collector and emitter. This stage is called Saturation Region and the typical voltage allowed across the Collector-Emitter (VCE) or Base-Emitter (VBE) could be 200 and 900 mV respectively. When base current is removed the transistor becomes fully off, this stage is called as the Cut-off Region and the Base Emitter voltage could be around 660 mV.

Transistor 2N2222 NPN is very much similar to the commonly used NPN transistor BC547. But there are two important features that distinguish both. 2N2222A can allow collector current upto 800mA and also has power dissipation of 652mW which can be used to drive larger loads than compared with BC547.

Features: –

• Bi-Polar high current NPN Transistor
• DC Current Gain (hFE) is 100
• Continuous Collector current (IC) is 800mA
• Emitter Base Voltage (VBE) is 6V
• Collector Emitter Voltage (VCE) is 30V
• Base Current(IB) is 5mA maximum

Transistor 2N2222 NPN Specifications: –

• Transistor Polarity: NPN
• Collector-Emitter Voltage V(BR)CEO: 30V
• Power Dissipation Pd: 500mW
• DC Collector Current: 800mA
• DC Current Gain hFE: 100
• Transistor Case Style: TO-18
• No. of Pins: 3
• Current Ic hFE: 150mA
• Collector-Emitter Voltage Vces: 400mV
• Continuous Collector Current Ic Max: 800mA
• Current Ic @ Vce Sat: 150mA
• Current Ic Continuous a Max: 800mA
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Min: 250MHz
• Gain Bandwidth ft Typ: 250MHz
• Hfe Min: 100

Transistor 2N2222 NPN Applications: –

• Audio Preamplifiers
• Audio Amplifier Stages
• Switching many loads at the same time
• Darlington Pairs
• RF Circuits
• Sensor Circuits
• Can be used to switch high current (upto 800mA) loads
• It can also be used in the various switching applications.
• Speed control of Motors
• Inverter and other rectifier circuits
• Can be used in Darlington Pair.

Pin Description: –

Datasheet: –

onsemi.com/pdf/datasheet/p2n2222a-d.pdf

Package: –

1 x Transistor 2N2222 NPN

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