IRFP450 N-CHANNEL MOSFET 500V/14A

@ MODERN HALLROAD

The metal-oxide-semiconductor field-effect transistor is a type of field-effect transistor, most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, whose voltage determines the conductivity of the device.

 350.00

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IRFP450 N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

IRFP450 Power MOSFETIRFP450 is a Third generation Power MOSFET that provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole.

It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

Technical Parameters : –

  • Manufacturer: International Rectifier
  • Part Number: IRFP450
  • Amps: 14
  • Voltage: 500
  • Package: TO-247
  • Mounting: Through Hole
  • Lead/Terminal Type: Radial
  • Number Leads/Terminals: 3
  • Color: Black
  • Temperature: 150
  • Termination Method: Solder

IRFP450 Mosfet Features :-

  • Single Pulse Avalanche Energy Rated
  • SOA is Power Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • High Input Impedance

IRFP450 Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 500V
Continuous Drain Current (Id) 14A
Drain-Source Resistance (Rds On) 370mOhms
Gate-Source Voltage (Vgs) 30V
Gate Charge (Qg) 77 nC
Operating Temperature Range -55 – 150°C
Power Dissipation (Pd) 200W

 

IRFP450 Pinout

IRFP450 Pinout

IRFP450 Additional Information
  • HexFET Power MosFET Transistors
  • Dynamic dv/dt Rating
  • Repetitive Avalanche Rated
  • Isolated Central Mounting Hole
  • Fast Switching
  • Ease of Paralleling
  • Simple Drive Requirements
Maximum Ratings IRFP450
  • Continuous Drain Current VGS @ 10V  – ID @ TC=25°C: 14.0A – ID @ TC=100°C: 8.7A
  • Pulsed Drain Current: 56A
  • Power Dissipation: 190W
  • Gate-to-Source Voltage: +/- 20V
  • Single Pulse Avalanche Energy: 760mJ
  • Avalanche Current: 8.7A
  • Peak Diode Recovery dv/dt: 3.5V/ns
  • Operating Temperature: -55°C to 150°C
  • Manufactured by: International Rectifier
Datasheet:-

irf.com/…info/datasheets/data/irfp450.pdf

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  • Store Name: MODERN HALLROAD
  • Vendor: MODERN HALLROAD
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