Name: IRFBG30 N-Channel Power MOSFET 3.1A -1000V
SKU: 13438
Price: 130.00 PKR
Availability: InStock

The IRFBG30 is a high voltage, high current, N-channel Power MOSFET. This MOSFET is a popular choice for a variety of applications, including switching, motor control, power supplies, LED drivers, and audio amplifiers.

The IRFBG30 MOSFET has a drain-source voltage rating of 1000V and a continuous drain current rating of 3.1A. It has a low gate threshold voltage of 2V, which makes it easy to turn on and off. The IRFBG30 is also a rugged device that can withstand high temperatures and high currents.

The advanced technology in the IRFBG30 MOSFET has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.

The IRFBG30 MOSFET is a three-terminal device with a gate (G), drain (D), and source (S) terminal. The gate terminal controls the flow of current between the drain and source terminals. When a voltage is applied to the gate, it creates an electric field that attracts electrons from the source to the drain, allowing current to flow. The amount of current that flows between the drain and source terminals is determine by the gate voltage.

The N-channel Power MOSFET IRFBG30 is a popular choice for high voltage, high current applications because it has a high voltage rating and a high current rating. It is also a good choice for applications where fast switching speeds are require because it has a low gate threshold voltage and a low on-resistance.

The IRFBG30 is a versatile and powerful MOSFET that can use in a wide variety of applications. IRFBG30 N-channel Power MOSFET is a good choice for applications where high voltage, high current, and fast switching speeds are require.

The IRFBG30 MOSFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features : –

The IRFBG30 is a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. The IRFBG30 MOSFET has a switching speed of 10ns, which is very fast for a high voltage MOSFET. This makes the IRFBG30 MOSFET a good choice for high frequency applications, such as switching power supplies. The IRFBG30 MOSFET has a number of benefits, including:

Low on-resistance
Low gate charge
Fast switching speed
Rugged design
Cost-effective

IRFBG30 N-Channel Power MOSFET Specifications : –

The IRFBG30 MOSFET is also suitable for miniaturization and higher efficiency in AC/DC power conversion systems. This is because the IRFBG30 MOSFET is a high power, high efficiency device that can be used in small packages. This makes it possible to create AC/DC power conversion systems that are smaller, lighter, and more energy efficient. here are the specifications of the IRFBG30 MOSFET:

Drain-source voltage rating: 1000V
Continuous drain current rating: 3.1A
Gate threshold voltage: 2V
On-resistance: 5.7mΩ
Gate charge: 70nC
Switching speed: 10ns
Operating temperature range: -55°C to +150°C
Storage temperature range: -65°C to +150°C
Package: TO-220AB

IRFBG30 N-Channel Power MOSFET Applications : –

The IRFBG30 MOSFET is a high voltage, high current, N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) that is known for its low on-resistance, fast switching speed, and rugged design. It is a versatile and powerful device that can use in a wide variety of applications. Here are some specific examples of applications where the IRFBG30 MOSFET can use:

Switching power supplies
Motor control
LED drivers
Industrial control
Home appliances
Audio amplifiers

This IRFBG30 N-Channel Power MOSFET is a versatile and powerful device that can use in a wide variety of applications. This IRFBG30 MOSFET is a good choice for applications where low on-resistance, low gate charge, fast switching speed, rugged design, cost-effectiveness, and high current rating are important.