IRFBG30 N-CHANNEL MOSFET, 1000V/3.1A

@ MODERN HALLROAD

IRFBG30 is third generation Power MOSFET provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

 130.00

In stock

IRFBG30 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

This IRFBG30 advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.

IRFBG30 is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

The low thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.

The best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness.

Preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.IRFBG30 is a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.

IRFBG30 is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features: –

  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple Drive Requirements
  • Compliant to RoHS Directive 2002/95/EC

IRFBG30 N-CHANNEL MOSFET Specifications: –

  • Number of Channels: 1 Channel
  • Transistor Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 1000V
  • Continuous Drain Current: 3.1A
  • Drain-Source Resistance: 5Ohms
  • Gate-Source Voltage: 20V
  • Gate Charge: 80 nC
  • Operating Temperature Range: -55~150°C
  • Power Dissipation: 125W
  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple Drive Requirements
  • Compliant to RoHS Directive 2002/95/EC
  • Package: TO-220

IRFBG30 N-CHANNEL MOSFET Datasheet: –

vishay.com/docs/91124/91124.pdf

Package: –

1 x IRFBG30 N-CHANNEL MOSFET, 1000V/3.1A

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  • Store Name: MODERN HALLROAD
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IRFBG30 N-CHANNEL MOSFET, 1000V/3.1A
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