IRFBG30 N-CHANNEL MOSFET, 1000V/3.1A

IRFBG30 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

This IRFBG30 advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.

IRFBG30 is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

The low thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.

The best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness.

Preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.IRFBG30 is a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.

IRFBG30 is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features: –

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC

IRFBG30 N-CHANNEL MOSFET Specifications: –

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage: 1000V
• Continuous Drain Current: 3.1A
• Drain-Source Resistance: 5Ohms
• Gate-Source Voltage: 20V
• Gate Charge: 80 nC
• Operating Temperature Range: -55~150°C
• Power Dissipation: 125W
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
• Package: TO-220

IRFBG30 N-CHANNEL MOSFET Datasheet: –

vishay.com/docs/91124/91124.pdf

Package: –

1 x IRFBG30 N-CHANNEL MOSFET, 1000V/3.1A

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