IRFBG30 N-CHANNEL MOSFET, 1000V/3.1A
MODERN HALLROAD
IRFBG30 is third generation Power MOSFET provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
₨ 130.00
IRFBG30 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
This IRFBG30 advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
IRFBG30 is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
The low thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness.
Preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.IRFBG30 is a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
IRFBG30 is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Features: –
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive 2002/95/EC
IRFBG30 N-CHANNEL MOSFET Specifications: –
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage: 1000V
- Continuous Drain Current: 3.1A
- Drain-Source Resistance: 5Ohms
- Gate-Source Voltage: 20V
- Gate Charge: 80 nC
- Operating Temperature Range: -55~150°C
- Power Dissipation: 125W
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive 2002/95/EC
- Package: TO-220
IRFBG30 N-CHANNEL MOSFET Datasheet: –
vishay.com/docs/91124/91124.pdf
Package: –
1 x IRFBG30 N-CHANNEL MOSFET, 1000V/3.1A
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Vendor Information
- Store Name: MODERN HALLROAD
- Vendor: MODERN HALLROAD
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