GP4063D IGBT IRGP4063D 600V 96A
The IRGP4063D is a 600V, 48A insulated-gate bipolar transistor (IGBT) manufactured by Infineon Technologies. GP4063D is a trench IGBT, which means that it uses a trench gate design to improve performance and reduce switching losses.
₨ 750.00
The GP4063D, IRGP4063, and IRGP4063D are all the same IGBT transistor manufactured by Infineon Technologies. IGBT IRGP4063 is a 600V, 96A, N-channel IGBT transistor that is commonly use in inverters, motor drives, and other applications that require high current switching.
The GP4063D is a popular IGBT transistor that is use in a wide variety of applications. GP4063D is a reliable and efficient switching device that can help to improve the performance and efficiency of your circuits.
The continuous forward current rating of the diode in the IRGP4063D IGBT transistor is 96A at 25°C and 48A at 100°C. This means that the diode can safely conduct a continuous current of up to 96A at 25°C without exceeding its maximum power dissipation rating. If the temperature of the diode increases to 100°C, the maximum continuous current that it can safely conduct is reduce to 48A.
The IRGP4063D is a 600V, 48A insulated-gate bipolar transistor (IGBT) manufactured by Infineon Technologies. GP4063D is a trench IGBT, which means that it uses a trench gate design to improve performance and reduce switching losses. The IRGP4063D also features an ultrafast soft recovery diode, which further reduces switching losses and improves efficiency.
The IGBT GP4063D is a popular choice for IGBT applications due to its high efficiency, low switching losses, and ruggedness. The IRGP4063D IGBT is a high-performance IGBT that is well-suited for a wide range of applications. It is a popular choice for designers who need an efficient, rugged, and reliable IGBT.
The IRGP 4063 has a collector-emitter voltage rating of 600V. This means that it can safely withstand up to 600 volts between the collector and emitter terminals. This makes it a good choice for applications where high voltages are required, such as motor drives, industrial automation, and power supplies.
Features : –
The IRGP4063D is an insulated gate bipolar transistor (IGBT) transistor. IGBT GP4063D is a three-terminal device with a gate, emitter, and collector. The gate terminal is use to control the flow of current between the emitter and collector terminals.
The working principle of an IGBT IRGP4063D is base on the combination of a bipolar junction transistor (BJT) and a metal-oxide-semiconductor field-effect transistor (MOSFET). When a positive voltage is applied to the gate terminal, a channel is formed between the emitter and collector terminals. This allows current to flow between the emitter and collector terminals.
When the gate voltage is removed, the channel is depleted and current stops flowing between the emitter and collector terminals. The IRGP4063 has a high voltage rating of 600V and a high current rating of 48A. It is a fast switching device with a switching speed of 80ns. It has a number of benefits, including:
- High voltage rating
- High current rating
- Fast switching speed
- Low on-resistance
- Soft recovery diode
- Robust design
GP4063D IGBT IRGP4063D Specifications : –
The maximum power dissipation of the IRGP4063D IGBT transistor is 330 W at 25°C and 170 W at 100°C. This means that the maximum amount of heat that the transistor can dissipate without exceeding its maximum junction temperature is 330 W at 25°C and 170 W at 100°C.
The maximum power dissipation of an IGBT transistor is determined by a number of factors, including the collector-to-emitter voltage (VCES), the continuous collector current (IC), and the on-resistance (Ron). The IRGP4063D has a VCES of 600 V, an IC of 48 A, and a Ron of 1.65 mΩ. These values, along with the maximum junction temperature of 175°C, are use to calculate the maximum power dissipation. Here are some of the specifications of the IRGP4063D:
- Collector-to-Emitter Voltage (VCES): 600V
- Continuous Collector Current (IC): 48A
- Switching Speed: 80ns
- On-Resistance (Ron): 1.65mΩ
- Soft Recovery Diode
- Junction Temperature (Tj): 175°C
- Operating Temperature Range: -40°C to 125°C
- Package: TO-247
GP4063D IGBT IRGP4063D Applications : –
The IRGP 4063 is a 600V, 48A, N-channel IGBT transistor manufactured by Infineon Technologies. IGBT 4063 is a high-power, high-speed switching device that is commonly use in inverters, motor drives, and other applications that require high current switching. Here are some of the applications of the IRGP4063D:
- Inverters
- Motor drives
- Power supplies
- Welding machines
- UPS systems
The GP 4063D is a versatile and powerful IGBT transistor that can use in a wide variety of applications. IGBT GP4063D is a reliable and efficient switching device that can help to improve the performance and efficiency of your circuits.
Package: –
1 x GP4063D IGBT IRGP4063D
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